HV SJ MOSFET 高压超结场效应晶体管
HV SJ MOSFET 高压超结场效应晶体管
第三代半导体材料功率器件是未来高性能功率器件的重要组成部分之一。海兰江研发团队在宽禁带半导体研究上有丰富的经验，研发了一系列SiC MOSFET 和GaN HEMT 器件，
SiC MOSFET具有高功率密度、低反向恢复电荷、
高开关频率的特性，工作温度高达200°C，可以完美替代Si IGBT在高压大功率领域的应用。
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Product
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Data Sheet
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Product Status
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Qualification
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Package Type
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Technology
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V
DSMax
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R
DS(on)Max
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VGS(th) Max
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I
D@25℃ Max
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I
DpulseMax
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Q
G(Tot)
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Mounting
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Feature
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| HMW60N028E7 |
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Active | Industrial | TO247 3L | eMOS E7 | 600 V | 28 mΩ | 4.5 V | 75.0 A | 270.0 A | 186 nC | Through Hole | Efficient Drive |
| HMZ60N028E7 |
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Active | Industrial | TO247 4L | eMOS E7 | 600 V | 28 mΩ | 4.5 V | 75.0 A | 270.0 A | 186 nC | Through Hole | Efficient Drive |
| HMW60N040E7 |
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Active | Industrial | TO247 3L | eMOS E7 | 600 V | 40 mΩ | 4.5 V | 67.0 A | 201.0 A | 133.4 nC | Through Hole | Efficient Drive |
| HMW60N070E7 |
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Active | Industrial | TO247 3L | eMOS E7 | 600 V | 70 mΩ | 4.5 V | 43.0 A | 129.0 A | 75 nC | Through Hole | Efficient Drive |
| HMW60N099E7 |
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Active | Industrial | TO247 3L | eMOS E7 | 600 V | 99 mΩ | 4.5 V | 32.0 A | 96.0 A | 52 nC | Through Hole | Efficient Drive |
| HMW60N120E7 |
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Inactive | Industrial | TO247 3L | eMOS E7 | 600 V | 120 mΩ | 4.5 V | 27.0 A | 81.0 A | 43.6 nC | Through Hole | Efficient Drive |
| HMT60N105E7 |
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Active | Industrial | TOLL | eMOS E7 | 600 V | 105 mΩ | 4.5 V | 31.0 A | 93.0 A | 52 nC | Surface Mount | Efficient Drive |
| HML60N105E7 |
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Active | Industrial | PQFN88 | eMOS E7 | 600 V | 105 mΩ | 4.5 V | 31.0 A | 93.0 A | 52 nC | Surface Mount | Efficient Drive |
| HMP60N099E7 |
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Active | Industrial | TO220 | eMOS E7 | 600 V | 99 mΩ | 4.5 V | 32.0 A | 96.0 A | 52 nC | Through Hole | Efficient Drive |
| HMP60N120E7 |
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Inactive | Industrial | TO220 | eMOS E7 | 600 V | 120 mΩ | 4.5 V | 27.0 A | 81.0 A | 43.6 nC | Through Hole | Efficient Drive |
| HMP60N180E7 |
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Active | Industrial | TO220 | eMOS E7 | 600 V | 180 mΩ | 4.5 V | 19.0 A | 57.0 A | 30.2 nC | Through Hole | Efficient Drive |
| HMP60N280E7 |
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Active | Industrial | TO220 | eMOS E7 | 600 V | 280 mΩ | 4.5 V | 12.5 A | 37.5 A | 19.6 nC | Through Hole | Efficient Drive |
| HMP60N380E7 |
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Active | Industrial | TO220 | eMOS E7 | 600 V | 380 mΩ | 4.5 V | 9.6 A | 28.8 A | 15.5 nC | Through Hole | Efficient Drive |
| HMF60N099E7 |
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Active | Industrial | TO220F | eMOS E7 | 600 V | 99 mΩ | 4.5 V | 32.0 A | 96.0 A | 52 nC | Through Hole | Efficient Drive |
| HMF60N120E7 |
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Inactive | Industrial | TO220F | eMOS E7 | 600 V | 120 mΩ | 4.5 V | 27.0 A | 81.0 A | 43.6 nC | Through Hole | Efficient Drive |
| HMF60N180E7 |
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Active | Industrial | TO220F | eMOS E7 | 600 V | 180 mΩ | 4.5 V | 19.0 A | 57.0 A | 30.2 nC | Through Hole | Efficient Drive |
| HMF60N280E7 |
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Active | Industrial | TO220F | eMOS E7 | 600 V | 280 mΩ | 4.5 V | 12.5 A | 37.5 A | 19.6 nC | Through Hole | Efficient Drive |
| HMF60N380E7 |
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Active | Industrial | TO220F | eMOS E7 | 600 V | 380 mΩ | 4.5 V | 9.6 A | 28.8 A | 15.5 nC | Through Hole | Efficient Drive |
| HMF60N600E7 |
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Active | Industrial | TO220F | eMOS E7 | 600 V | 600 mΩ | 4.5 V | 6.3 A | 18.9 A | 10.1 nC | Through Hole | Efficient Drive |
| HMD60N280E7 |
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Active | Industrial | DPAK | eMOS E7 | 600 V | 280 mΩ | 4.5 V | 12.5 A | 37.5 A | 19.6 nC | Surface Mount | Efficient Drive |
| HMD60N380E7 |
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Active | Industrial | DPAK | eMOS E7 | 600 V | 380 mΩ | 4.5 V | 9.6 A | 28.8 A | 15.5 nC | Surface Mount | Efficient Drive |
| HMD60N600E7 |
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Active | Industrial | DPAK | eMOS E7 | 600 V | 600 mΩ | 4.5 V | 6.3 A | 18.9 A | 10.1 nC | Surface Mount | Efficient Drive |
| HMF65N180E7 |
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Active | Industrial | TO220F | eMOS E7 | 650 V | 180 mΩ | 4.5 V | 19.0 A | 53.0 A | 32.1 nC | Through Hole | Efficient Drive |
| HMF65N280E7 |
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Active | Industrial | TO220F | eMOS E7 | 650 V | 280 mΩ | 4.5 V | 12.5 A | 37.5 A | 21 nC | Through Hole | Efficient Drive |
| HMF65N380E7 |
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Active | Industrial | TO220F | eMOS E7 | 650 V | 380 mΩ | 4.5 V | 9.6 A | 28.8 A | 16.5 nC | Through Hole | Efficient Drive |
| HMF65N600E7 |
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Active | Industrial | TO220F | eMOS E7 | 650 V | 600 mΩ | 4.5 V | 6.3 A | 18.9 A | 11.9 nC | Through Hole | Efficient Drive |
| HMW60N030UF7 |
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Active | Industrial | TO247 3L | eMOS UF7 | 600 V | 30 mΩ | 5 V | 75.0 A | 261.0 A | 195 nC | Through Hole | FRFET |
| HMW60N043UF7 |
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Active | Industrial | TO247 3L | eMOS UF7 | 600 V | 43 mΩ | 5 V | 64.0 A | 192.0 A | 145 nC | Through Hole | FRFET |
| HMW65N045UF7 |
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Active | Industrial | TO247 3L | eMOS UF7 | 650 V | 45 mΩ | 5 V | 62.6 A | 188.0 A | 142 nC | Through Hole | FRFET |
| HMW60N075UF7 |
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Active | Industrial | TO247 3L | eMOS UF7 | 600 V | 75 mΩ | 5 V | 42.0 A | 126.0 A | 76 nC | Through Hole | FRFET |
| HMW60N105UF7 |
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Active | Industrial | TO247 3L | eMOS UF7 | 600 V | 105 mΩ | 5 V | 31.5 A | 94.5 A | 53 nC | Through Hole | FRFET |
| HMF60N193UF7 |
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Active | Industrial | TO220F | eMOS UF7 | 600 V | 193 mΩ | 5 V | 18.2 A | 54.6 A | 31.9 nC | Through Hole | FRFET |
| HMW60N030F7 |
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Inactive | Industrial | TO247 3L | eMOS F7 | 600 V | 30 mΩ | 5 V | 75.0 A | 261.0 A | 209 nC | Through Hole | FRFET |
| HMW60N043F7 |
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Inactive | Industrial | TO247 3L | eMOS F7 | 600 V | 43 mΩ | 5 V | 64.0 A | 192.0 A | 144 nC | Through Hole | FRFET |
| HMW65N043F7 |
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Inactive | Industrial | TO247 3L | eMOS F7 | 650 V | 43 mΩ | 5 V | 64.0 A | 192.0 A | 143 nC | Through Hole | FRFET |
| HMW60N075F7 |
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Inactive | Industrial | TO247 3L | eMOS F7 | 600 V | 75 mΩ | 5 V | 42.0 A | 126.0 A | 80 nC | Through Hole | FRFET |
| HMW60N105F7 |
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Inactive | Industrial | TO247 3L | eMOS F7 | 600 V | 105 mΩ | 5 V | 31.5 A | 94.5 A | 57.7 nC | Through Hole | FRFET |
| HMF60N193F7 |
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Inactive | Industrial | TO220F | eMOS F7 | 600 V | 193 mΩ | 5 V | 18.2 A | 54.6 A | 33.5 nC | Through Hole | FRFET |
