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SiC MOSFET/碳化硅 MOSFET

第三代半导体材料功率器件是未来高性能功率器件的重要组成部分之一。海兰江研发团队在宽禁带半导体研究上有丰富的经验，研发了一系列SiC MOSFET/碳化硅 MOSFET 和GaN HEMT 器件, SiC MOSFET/碳化硅 MOSFET具有高功率密度、低反向恢复电荷、高开关频率的特性，工作温度高达200°C，可以完美替代Si IGBT在高压大功率领域的应用。

Product	Product Status	Qualification	Package Type	Technology	V _DSMax	R _DS(on)Typ	VGS(th) Max	I _D@25℃ Max	Q _G(tot)	Output Capacitance	Maximum Junction Temperature	Mounting	Feature
HCW120N16M2	Active	Industrial	TO247 3L	eSiC M2	1200 V	16 mΩ	4.5 V	118.0 A	152 nC	227 pF	175 ℃	Through Hole	High Performance
HCZ120N16M2	Active	Industrial	TO247 4L	eSiC M2	1200 V	16 mΩ	4.5 V	118.0 A	152 nC	227 pF	175 ℃	Through Hole	High Performance
HCW120N40M2	Active	Industrial	TO247 3L	eSiC M2	1200 V	40 mΩ	4.5 V	57.0 A	62 nC	105 pF	175 ℃	Through Hole	High Performance
HCZ120N40M2	Active	Industrial	TO247 4L	eSiC M2	1200 V	40 mΩ	4.5 V	57.0 A	62 nC	105 pF	175 ℃	Through Hole	High Performance
HCZN120N40M2	Active	Industrial	TO247-4L Notch	eSiC M2	1200 V	40 mΩ	4.5 V	57.0 A	62 nC	105 pF	175 ℃	Through Hole	High Performance
HCRZ120N40M2A	Active	Automotive	TSPAK-DBC	eSiC M2	1200 V	40 mΩ	4.5 V	57.0 A	62 nC	105 pF	175 ℃	Surface Mount	High Performance
HCR120N40M2A	Active	Automotive	TSPAK-LF	eSiC M2	1200 V	40 mΩ	4.5 V	57.0 A	62 nC	105 pF	175 ℃	Surface Mount	High Performance
HCW120N21M1	Active	Industrial	TO247 3L	eSiC M1	1200 V	21 mΩ	4.5 V	100.0 A	200 nC	224 pF	175 ℃	Through Hole	High Performance
HCZ120N21M1	Active	Industrial	TO247 4L	eSiC M1	1200 V	21 mΩ	4.5 V	100.0 A	198 nC	224 pF	175 ℃	Through Hole	High Performance
HCW120N40M1	Active	Industrial	TO247 3L	eSiC M1	1200 V	40 mΩ	4.5 V	60.0 A	108 nC	124 pF	175 ℃	Through Hole	High Performance
HCZ120N40M1	Active	Industrial	TO247 4L	eSiC M1	1200 V	40 mΩ	4.5 V	60.0 A	104 nC	124 pF	175 ℃	Through Hole	High Performance
HCW120N80M1	Active	Industrial	TO247 3L	eSiC M1	1200 V	80 mΩ	4.5 V	30.0 A	50 nC	64 pF	175 ℃	Through Hole	High Performance
HCZ120N80M1	Active	Industrial	TO247 4L	eSiC M1	1200 V	80 mΩ	4.5 V	30.0 A	52 nC	64 pF	175 ℃	Through Hole	High Performance
HCBF120N80M1	Active	Industrial	D2PAK 7L	eSiC M1	1200 V	80 mΩ	4.5 V	30.0 A	50 nC	64 pF	175 ℃	Surface Mount	High Performance
HCZ120N80M1A	Active	Automotive	TO247 4L	eSiC M1	1200 V	80 mΩ	4.5 V	30.0 A	52 nC	64 pF	175 ℃	Through Hole	High Performance
HCBF120N80M1A	Active	Automotive	D2PAK 7L	eSiC M1	1200 V	80 mΩ	4.5 V	30.0 A	50 nC	64 pF	175 ℃	Surface Mount	High Performance
HCW65N27M1	Active	Industrial	TO247 3L	eSiC M1	650 V	27 mΩ	4.5 V	75.0 A	91 nC	207 pF	175 ℃	Through Hole	High Performance
HCZ65N27M1	Active	Industrial	TO247 4L	eSiC M1	650 V	27 mΩ	4.5 V	75.0 A	91 nC	207 pF	175 ℃	Through Hole	High Performance
HCW65N45M1	Active	Industrial	TO247 3L	eSiC M1	650 V	45 mΩ	4.5 V	44.0 A	56 nC	131 pF	175 ℃	Through Hole	High Performance
HCZ65N45M1	Active	Industrial	TO247 4L	eSiC M1	650 V	45 mΩ	4.5 V	44.0 A	56 nC	131 pF	175 ℃	Through Hole	High Performance
HCT65N27M1	Active	Industrial	TOLL	eSiC M1	650 V	27 mΩ	4.5 V	84.0 A	91 nC	207 pF	175 ℃	Surface Mount	High Performance